| PART |
Description |
Maker |
| HMC592 |
high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| 15GN03CA12 15GN03CA-TB-E ENA1106A |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| 2SK3557-7-TB-E 2SK3557-6-TB-E 2SK3557 |
N-Channel JFET, 15V, 10 to 32mA, 35mS, CP
High-Frequency Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SC250WLTRT SC250EVB SC250 |
Step-Down DC-DC Converter with Bias LDO for RF Power Amplifi ers
|
Semtech Corporation
|
| PTMA180402M11 |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz
|
Infineon Technologies AG
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| MCH4020-TL-H MCH402012 ENA1280A ENA1280 |
RF Transistor, 8V, 150mA, fT=16GHz, NPN Single MCPH4
NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier
|
ON Semiconductor
Sanyo Semicon Device
|
| CHR2391-99F CHR2391-9900 |
12-16GHz Integrated Down Converter
|
United Monolithic Semic...
|
| TA100-160-32-20 |
10 - 16GHz 20 dBm Amplifier
|
Transcom, Inc.
|
| CHR2391 |
12-16GHz Integrated Down Converter
|
United Monolithic Semiconductors
|
